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LM1771_0608 Scheda tecnica(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Il numero della parte LM1771_0608
Spiegazioni elettronici  Low-Voltage Synchronous Buck Controller with Precision Enable and No External Compensation
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Produttore elettronici  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM1771_0608 Scheda tecnica(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
IN
-0.3V to 6V
EN, FB, HG, LG
-0.3V to V
IN
Storage Temperature Range
−65˚C to 150˚C
Junction Temperature
150˚C
Lead Temperature
(soldering, 10sec)
260˚C
ESD Rating
2kV
Operating Ratings
V
IN to GND
2.8V to 5.5V
Junction Temperature Range (T
J)
−40˚C to +125˚C
Electrical Characteristics Specifications with standard typeface are for T
J = 25˚C, and those in bold face
type apply over the full Junction Temperature Range (−40˚C to +125˚C). Minimum and Maximum limits are guaranteed
through test, design or statistical correlation. Typical values represent the most likely parametric norm at T
J = 25˚C and are
provided for reference purposes only. Unless otherwise specified V
IN = 3.3V.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
FB
Feedback pin voltage
0.782
0.8
0.818
V
I
Q
Quiescent current
V
FB = 0.9V
400
700
µA
T
ON
Switch On-Time
LM1771S - (500ns)
0.4
0.5
0.6
µs
LM1771T - (1000ns)
0.8
1.0
1.2
LM1771U - (2000ns)
1.6
2.0
2.4
T
OFF_MIN
Minimum Off-Time
LM1771S - (500ns)
150
250
ns
LM1771T - (1000ns)
135
225
LM1771U - (2000ns)
120
220
T
D
Gate Drive Dead-Time
70
ns
V
IH_EN
EN Pin Rising Threshold
1.15
1.2
1.25
V
V
EN_HYS
EN Pin Hysteresis
50
200
mV
I
FB
Feedback pin bias current
V
FB = 0.9V
50
nA
V
UVLO
Under-voltage lock out
V
IN Rising Edge
2.65
2.8
V
V
UVLO_HYS
Under-voltage lock out hysteresis
50
mV
V
SC_TH
Feedback pin Short Circuit Latch
Threshold
0.42
0.55
0.65
V
R
DS(ON) 1
HG FET driver pull-up On resistance
I
HG =20mA
4
R
DS(ON) 2
HG FET driver pull-down On resistance I
HG =20mA
6
R
DS(ON) 3
LG FET driver pull-up On resistance
I
LG =20mA
4
R
DS(ON) 4
LG FET driver pull-down On resistance I
LG =20mA
6
Note 1: Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications, see Electrical Characteristics.
www.national.com
3


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