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NZT6714 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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NZT6714 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page 3 Electrical Characteristics TA= 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS hFE DC Current Gain IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 1.0 A, VCE = 1.0 V 55 60 50 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0 A, IB = 100 mA 0.5 V VBE(on) Base-Emitter On Voltage IC = 1.0 A, VCE = 1.0 V 1.2 V V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 030V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, I C = 0 5.0 V ICBO Collector-Cutoff Current VCB = 40 V, IE = 0 0.1 µA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 0.1 µA SMALL SIGNAL CHARACTERISTICS hfe Small-Signal Current Gain IC = 50 mA, VCE = 10 V, f = 20 MHz 2.5 25 Ccb Collector-Base Capacitance VCB = 10 mA, IE = 0, f = 1.0 MHz 30 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% Typical Characteristics NPN General Purpose Amplifier (continued) Typical Pulsed Current Gain vs Collector Current 0.001 0.01 0.1 1 0 100 200 300 400 500 I - COLLECTOR CURRENT (A) - 40 °C 25 °C C V = 5V CE 125 °C Collector-Emitter Saturation Voltage vs Collector Current 0.01 0.1 1 0.01 0.1 1 I - COLLE CTOR CURRENT (A) C β = 10 125 °C - 40 °C 25 °C |
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