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NZT660 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte NZT660
Spiegazioni elettronici  PNP Low Saturation Transistor
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Homepage  http://www.fairchildsemi.com
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©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
NZT660/NZT660A Rev. C3
April 2005
NZT660/NZT660A
PNP Low Saturation Transistor
• These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a = 25°C unless otherwise noted
Symbol
Parameter
NZT660
NZT660A
Units
VCEO
Collector-Emitter Voltage
60
60
V
VCBO
Collector-Base Voltage
80
60
V
VEBO
Emitter-Base Voltage
5
5
V
IC
Collector Current
- Continuous
3
3
A
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ +150
- 55 ~ +150
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA
60
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA
NZT660
NZT660A
80
60
V
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA
5V
ICBO
Collector-Base Cutoff Current
VCB = 30V
VCB = 30V, TA = 100°C
100
10
nA
µA
IEBO
Emitter-Base Cutoff Current
VEB = 4V
100
nA
On Characteristics *
hFE
DC Current Gain
IC = 100mA, VCE = 2V
IC = 500mA, VCE = 2V
NZT660
NZT660A
IC = 1A, VCE = 2V
IC = 3A, VCE = 2V
70
100
250
80
25
300
550
SOT-223
1
2
4
3
1. Base 2. Collector 3. Emitter


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