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NZT660 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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NZT660 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page 2 www.fairchildsemi.com NZT660/NZT660A Rev. C3 Electrical Characteristics T a = 25°C unless otherwise noted (Continued) * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics T a=25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA IC = 3A, IB = 300mA NZT660 NZT660A 300 550 500 mV mV mV VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA 1.25 V VBE(on) Base-Emitter On Voltage IC = 1A, VCE = 2V 1V Small Signal Characteristics Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 45 pF fT Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz 75 MHz Symbol Parameter NZT660/NZT660A Units PD Total Device Dissipation 2 W RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W |
Codice articolo simile - NZT660_05 |
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Descrizione simile - NZT660_05 |
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