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NZT605 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte NZT605
Spiegazioni elettronici  NPN Darlington Transistor
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
NZT605 Rev. C
January 2007
NZT605
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at collector
currents to 1.0A and high breakdown voltage.
• Sourced from process 06.
Absolute Maximum Ratings * T
C = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics * T
C = 25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2.0%
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
110
V
VCBO
Collector-Base Voltage
140
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current
- Continuous
1.5
A
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Parameter
Conditions
Min.
Max
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 10mA, IB = 0
110
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
140
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
10
V
ICBO
Collector Cutoff Current
VCB = 120V, IE = 0
10
nA
ICES
Collector Cutoff Current
VCE = 120V, IE = 0
10
nA
IEBO
Emitter Cut-off Current
VEB = 8.0V, IC = 0
100
nA
On Characteristics *
hFE
DC Current Gain
VCE = 5.0V, IC = 50mA
VCE = 5.0V, IC = 500mA
VCE = 5.0V, IC = 1.0A
VCE = 5.0V, IC = 1.5A
VCE = 5.0V, IC = 2.0A
2000
5000
2000
300
200
100K
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 250mA, IB = 0.25mA
IC = 1.0A, IB = 1.0mA
1
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.0A, IB = 1.0mA
1.8
V
VBE(on)
Base-Emitter On Voltage
IC = 1.0A, VCE = 5.0V
1.7
V
Small Signal characteristics
fT
Transition Frequency
IC = 100mA, VCE = 10V, f = 20MHz
150
MHz
SOT-223
1. Base 2.4. Collector 3. Emitter
1
2
4
3


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