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NZT605 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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NZT605 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com NZT605 Rev. C January 2007 NZT605 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. Absolute Maximum Ratings * T C = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations Electrical Characteristics * T C = 25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Symbol Parameter Value Units VCEO Collector-Emitter Voltage 110 V VCBO Collector-Base Voltage 140 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.5 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Parameter Conditions Min. Max Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 110 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 140 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 10 V ICBO Collector Cutoff Current VCB = 120V, IE = 0 10 nA ICES Collector Cutoff Current VCE = 120V, IE = 0 10 nA IEBO Emitter Cut-off Current VEB = 8.0V, IC = 0 100 nA On Characteristics * hFE DC Current Gain VCE = 5.0V, IC = 50mA VCE = 5.0V, IC = 500mA VCE = 5.0V, IC = 1.0A VCE = 5.0V, IC = 1.5A VCE = 5.0V, IC = 2.0A 2000 5000 2000 300 200 100K VCE(sat) Collector-Emitter Saturation Voltage IC = 250mA, IB = 0.25mA IC = 1.0A, IB = 1.0mA 1 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.0A, IB = 1.0mA 1.8 V VBE(on) Base-Emitter On Voltage IC = 1.0A, VCE = 5.0V 1.7 V Small Signal characteristics fT Transition Frequency IC = 100mA, VCE = 10V, f = 20MHz 150 MHz SOT-223 1. Base 2.4. Collector 3. Emitter 1 2 4 3 |
Codice articolo simile - NZT605_07 |
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Descrizione simile - NZT605_07 |
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