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IRFP064VPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRFP064VPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRFP064VPbF HEXFET® Power MOSFET 07/06/04 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.60 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance www.irf.com 1 VDSS = 60V RDS(on) = 5.5mΩ ID = 130A S D G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description PD - 95501 Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 95 A IDM Pulsed Drain Current 520 PD @TC = 25°C Power Dissipation 250 W Linear Derating Factor 1.7 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 130 A EAR Repetitive Avalanche Energy 25 mJ dv/dt Peak Diode Recovery dv/dt 4.7 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) TO-247AC |
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