2N3468 datasheet(2/2 Pages) MICROSEMI

Il numero della parte	2N3468

Spiegazioni elettronici	PNP SILICON SWITCHING TRANSISTOR

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Produttore elettronici	MICROSEMI [Microsemi Corporation]

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2N3467, L, 2N3468, L, JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

Symbol

Min.

Max.

Unit

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio

IC =150 mAdc, VCE = 1.0 Vdc

2N3467, L

2N3468, L

IC = 500 mAdc, VCE = 1.0 Vdc

2N3467, L

2N3468, L

IC = 1.0 Adc, VCE = 5.0 Vdc

2N3467, L

2N3468, L

hFE

40

25

40

25

40

25

120

75

Collector-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

IC = 500 mAdc, IB = 50 mAdc

IC = 1.0 Adc, IB = 100 mAdc

VCE(sat)

0.35

0.6

1.2

Vdc

Base-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

IC = 500 mAdc, IB = 50 mAdc

IC = 1.0 Adc, IB = 100 mAdc

VBE(sat)

0.8

1.0

1.2

1.6

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Cobo

25

pF

Extrapolated Unity Gain Frequency

IC = 50 mAdc, VCE = 10 Vdc, f = 100NHz

2N3467, L

2N3468, L

ft

175

150

500

MHz

Input Capacitance

VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz

Cibo

100

pF

SWITCHING CHARACTERISTICS

Delay Time

IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2

td

10

ns

Rise Time

IC = 500 mAdc, IB1 = 50 mAdc, VEB = 2

tr

30

ns

Storage Time

IC = 500 mAdc, IB1 = IB2 = 50 mAdc

ts

60

ns

Fall Time

IC = 100 mAdc, IB1 = IB2 = 50 mAdc

tf

30

ns

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

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