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IRF5210LPBF Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF5210LPBF Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 10 page  IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET PD - 97049A VDSS = -100V RDS(on) = 60mΩ ID = -38A l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Some Parameters are Different from IRF5210S/L l P-Channel l Lead-Free 05/22/06 S D G www.irf.com 1 Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V A ID @ TC = 100°C Continuous Drain Current, VGS @ -10V IDM Pulsed Drain Current c PD @TA = 25°C Maximum Power Dissipation W PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy c mJ dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 °C/W RθJA Junction-to-Ambient (PCB Mount, steady state) g ––– 40 170 1.3 ± 20 0.017 120 -23 300 (1.6mm from case ) -55 to + 150 -7.4 Max. -38 -24 -140 3.1 D2Pak IRF5210SPbF TO-262 IRF5210LPbF S D G D S D G D GD S Gate Drain Source Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These fea- tures combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. |
Codice articolo simile - IRF5210LPBF |
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Descrizione simile - IRF5210LPBF |
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