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AM29F010B35DGC1 Scheda tecnica(PDF) 3 Page - Advanced Micro Devices |
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AM29F010B35DGC1 Scheda tecnica(HTML) 3 Page - Advanced Micro Devices |
3 / 14 page SUPPLEMENT Publication# 23479 Rev: A Amendment/0 Issue Date: October 23, 2003 Am29F010B Known Good Die 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with Am29F010 and Am29F010A device ■ High performance — 90 or 120 ns maximum access time ■ Low power consumption — 12 mA typical active read current — 30 mA typical program/erase current — <1 µA typical standby current ■ Flexible sector architecture — Eight uniform sectors — Any combination of sectors can be erased — Supports full chip erase ■ Sector protection — Hardware-based feature that disables/re-enables program and erase operations in any combination of sectors — Sector protection/unprotection can be implemented using standard PROM programming equipment ■ Embedded Algorithms — Embedded Erase algorithm automatically pre-programs and erases the chip or any combination of designated sector — Embedded Program algorithm automatically programs and verifies data at specified address ■ Erase Suspend/Resume — Supports reading data from a sector not being erased ■ Minimum 1,000,000 program/erase cycles guaranteed ■ 20-year data retention at 125 °C — Reliable operation for the life of the system ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash — Superior inadvertent write protection ■ Data# Polling and Toggle Bits — Provides a software method of detecting program or erase cycle completion ■ Tested to datasheet specifications at temperature ■ Quality and reliability levels equivalent to standard packaged components |
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