BC847PN datasheet(2/4 Pages) DIODES

Il numero della parte	BC847PN

Spiegazioni elettronici	COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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Produttore elettronici	DIODES [Diodes Incorporated]

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DS30278 Rev. 8 - 2

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BC847PN

www.diodes.com

Electrical Characteristics

NPN BC847B Section

@ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage (Note 3)

V(BR)CBO

50

—

V

IC = 10

µA, IB = 0

Collector-Emitter Breakdown Voltage (Note 3)

V(BR)CEO

45

—

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage (Note 3)

V(BR)EBO

6

—

V

IE = 1

µA, IC = 0

DC Current Gain (Note 3)

hFE

200

290

450

—

VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage (Note 3)

VCE(SAT)

—

90

200

250

600

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage (Note 3)

VBE(SAT)

—

700

900

—

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage (Note 3)

VBE(ON)

580

—

660

—

700

720

mV

VCE = 5.0V, IC = 2.0mA

VCE =5.0V, IC = 10mA

Collector-Cutoff Current (Note 3)

ICBO

—

15

5.0

nA

µA

VCB = 30V

VCB = 30V, TA = 150°C

Gain Bandwidth Product

fT

100

300

—

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—

3.5

6.0

pF

VCB = 10V, f = 1.0MHz

Noise Figure

NF

—

2.0

10

dB

VCE = 5V, IC = 200µA,

RG = 2.0k

Ω,

f = 1.0kHz,

∆f = 200Hz

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage (Note 3)

V(BR)CBO

-50

—

V

IC = 10

µA, IB = 0

Collector-Emitter Breakdown Voltage (Note 3)

V(BR)CEO

-45

—

V

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage (Note 3)

V(BR)EBO

-5

—

V

IE = 1

µA, IC = 0

DC Current Gain (Note 3)

hFE

220

290

475

—

VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage (Note 3)

VCE(SAT)

—

-75

-250

-300

-650

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage (Note 3)

VBE(SAT)

—

-700

-850

—

-950

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage (Note 3)

VBE(ON)

-600

—

-650

—

-750

-820

mV

VCE = 5.0V, IC = 2.0mA

VCE = 5.0V, IC = 10mA

Collector-Cutoff Current (Note 3)

ICBO

—

-15

-4.0

nA

µA

VCB = 30V

VCB = 30V, TA = 150°C

Gain Bandwidth Product

fT

100

200

—

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Collector-Base Capacitance

CCBO

—

3

4.5

pF

VCB = 10V, f = 1.0MHz

Noise Figure

NF

—

10

dB

VCE = 5V, IC = 200µA,

RG = 2.0k

Ω,

f = 1.0kHz,

∆f = 200Hz

Electrical Characteristics

PNP BC857B Section

@ TA = 25°C unless otherwise specified

Ordering Information (Note 4)

Device

Packaging

Shipping

BC847PN-7-F

SOT-363

3000/Tape & Reel

Notes: 3. Short duration pulse test used to minimize self-heating effect.

4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

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