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IRF840 Scheda tecnica(PDF) 2 Page - NXP Semiconductors

Il numero della parte IRF840
Spiegazioni elettronici  PowerMOS transistor Avalanche energy rated
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRF840 Scheda tecnica(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
IRF840
Avalanche energy rated
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
0.85
K/W
to mounting base
R
th j-a
Thermal resistance junction
in free air
-
60
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA
500
-
-
V
voltage
∆V
(BR)DSS / Drain-source breakdown
V
DS = VGS; ID = 0.25 mA
-
0.1
-
%/K
∆T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS = 10 V; ID = 4.8 A
-
0.6
0.85
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 0.25 mA
2.0
3.0
4.0
V
g
fs
Forward transconductance
V
DS = 30 V; ID = 4.8 A
3.5
6
-
S
I
DSS
Drain-source leakage current V
DS = 500 V; VGS = 0 V
-
1
25
µA
V
DS = 400 V; VGS = 0 V; Tj = 125 ˚C
-
40
250
µA
I
GSS
Gate-source leakage current V
GS = ±30 V; VDS = 0 V
-
10
200
nA
Q
g(tot)
Total gate charge
I
D = 8.5 A; VDD = 400 V; VGS = 10 V
-
55
80
nC
Q
gs
Gate-source charge
-
5.5
7
nC
Q
gd
Gate-drain (Miller) charge
-
30
45
nC
t
d(on)
Turn-on delay time
V
DD = 250 V; RD = 30 Ω;
-
18
-
ns
t
r
Turn-on rise time
R
G = 9.1 Ω
-37
-
ns
t
d(off)
Turn-off delay time
-
80
-
ns
t
f
Turn-off fall time
-
36
-
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
960
-
pF
C
oss
Output capacitance
-
140
-
pF
C
rss
Feedback capacitance
-
80
-
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
T
mb = 25˚C
-
-
8.5
A
(body diode)
I
SM
Pulsed source current (body
T
mb = 25˚C
-
-
34
A
diode)
V
SD
Diode forward voltage
I
S = 8.5 A; VGS = 0 V
-
-
1.2
V
t
rr
Reverse recovery time
I
S = 8.5 A; VGS = 0 V; dI/dt = 100 A/µs
-
440
-
ns
Q
rr
Reverse recovery charge
-
6.4
-
µC
March 1999
2
Rev 1.000


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