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FFPF08H60S Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FFPF08H60S Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page 2 www.fairchildsemi.com FFPF08H60S Rev. A Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Pulse : Test Pulse width = 300 µs, Duty Cycle = 2% Test Circuit and Waveforms Parameter Conditions Min. Typ. Max Units VFM 1 IF = 8A IF = 8A TC = 25 °C TC = 125 °C - - - - 2.1 1.7 V V IRM 1 VR = 600V VR = 600V TC = 25 °C TC = 125 °C - - - - 100 200 µA µA trr IF =1A, di/dt = 100A/µs, VCC = 30V IF =8A, di/dt = 100A/µs, VCC = 390V TC = 25 °C TC = 25 °C - - - - 35 45 ns ns ta tb Qrr IF =8A, di/dt = 100A/µs, VCC = 390V TC = 25 °C TC = 25 °C TC = 25 °C - - - 15 16 18.6 - - - ns ns nC WAVL Avalanche Energy (L = 40mH) 20 - - mJ |
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