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FDC638APZ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDC638APZ
Spiegazioni elettronici  P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC638APZ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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December 2006
©2006 Fairchild Semiconductor Corporation
FDC638APZ Rev.B
www.fairchildsemi.com
1
FDC638APZ
P-Channel 2.5V PowerTrench® Specified MOSFET
–20V, –4.5A, 4
3mΩ
Features
Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A
Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A
Low gate charge (8nC typical).
High performance trench technology for extremely low rDS(on).
SuperSOTTM –6 package:small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
RoHS Compliant
General Description
This P-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance
These devices are well suited for battery power applications:load
switching and power management,battery charging circuits,and
DC/DC conversion.
Application
DC - DC Conversion
MOSFET Maximum Ratings T
A= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
–20
V
VGS
Gate to Source Voltage
±12
V
ID
Drain Current -Continuous
(Note 1a)
–4.5
A
-Pulsed
–20
PD
Power Dissipation
(Note 1a)
1.6
W
Power Dissipation
(Note 1b)
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
7
8
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
156
Device Marking
Device
Reel Size
Tape Width
Quantity
.638Z
FDC638APZ
7’’
8mm
3000 units
SuperSOTTM -6
Pin 1
D
S
G
D
D
D
3
5
6
4
1
2
3
D
D
D
D
S
G


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