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FDC638APZ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDC638APZ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page December 2006 ©2006 Fairchild Semiconductor Corporation FDC638APZ Rev.B www.fairchildsemi.com 1 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET –20V, –4.5A, 4 3mΩ Features Max rDS(on) = 43mΩ at VGS = –4.5V, ID = –4.5A Max rDS(on) = 68mΩ at VGS = –2.5V, ID = –3.8A Low gate charge (8nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM –6 package:small footprint (72% smaller than standard SO–8) low profile (1mm thick). RoHS Compliant General Description This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion. Application DC - DC Conversion MOSFET Maximum Ratings T A= 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage –20 V VGS Gate to Source Voltage ±12 V ID Drain Current -Continuous (Note 1a) –4.5 A -Pulsed –20 PD Power Dissipation (Note 1a) 1.6 W Power Dissipation (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C RθJA Thermal Resistance, Junction to Ambient (Note 1a) 7 8 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1b) 156 Device Marking Device Reel Size Tape Width Quantity .638Z FDC638APZ 7’’ 8mm 3000 units SuperSOTTM -6 Pin 1 D S G D D D 3 5 6 4 1 2 3 D D D D S G |
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