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BYM26G Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte BYM26G
Spiegazioni elettronici  Fast soft-recovery controlled avalanche rectifiers
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYM26G Scheda tecnica(HTML) 3 Page - NXP Semiconductors

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1996 May 24
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
IFRM
repetitive peak forward current
Ttp =55 °C; see Figs 6 and 7
BYM26A to E
19
A
BYM26F and G
21
A
IFRM
repetitive peak forward current
Tamb =65 °C; see Figs 8 and 9
BYM26A to E
8.0
A
BYM26F and G
8.5
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
45
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to surge;
inductive load switched off
10
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Figs 12 and 13
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 2 A; Tj =Tj max;
see Figs 14 and 15
BYM26A to E
−−
1.34
V
BYM26F and G
−−
1.34
V
VF
forward voltage
IF =2A;
see Figs 14 and 15
BYM26A to E
−−
2.65
V
BYM26F and G
−−
2.30
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYM26A
300
−−
V
BYM26B
500
−−
V
BYM26C
700
−−
V
BYM26D
900
−−
V
BYM26E
1100
−−
V
BYM26F
1300
−−
V
BYM26G
1500
−−
V
IR
reverse current
VR =VRRMmax;
see Fig.16
−−
10
µA
VR =VRRMmax;
Tj = 165 °C; see Fig.16
−−
150
µA
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig.20
BYM26A to C
−−
30
ns
BYM26D and E
−−
75
ns
BYM26F and G
−−
150
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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