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BYG80F Scheda tecnica(PDF) 8 Page - NXP Semiconductors |
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BYG80F Scheda tecnica(HTML) 8 Page - NXP Semiconductors |
8 / 20 page 1997 Nov 25 8 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYG80 series Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. BYG80A to D Tamb =60 °C; Rth j-a = 100 K/W. VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 200 V. handbook, full pagewidth 0 20 4 8 12 IFRM (A) 16 MGL082 10−2 10−1 110 tp (ms) 102 103 0.2 0.5 1 0.1 δ = 0.05 handbook, full pagewidth 0 20 4 8 12 IFRM (A) 16 MGL083 10−2 10−1 110 tp (ms) 102 103 0.2 0.5 1 0.1 δ = 0.05 BYG80F and G Tamb =60 °C; Rth j-a = 100 K/W. VRRMmax during 1 - δ; curves include derating for Tj max at VRRM = 400 V. Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. |
Codice articolo simile - BYG80F |
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Descrizione simile - BYG80F |
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