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BYG90-90 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BYG90-90 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 6 page 1996 May 13 3 Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD106A standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage see Fig.2; note 1 IF = 0.06 A − − 360 mV IF = 1 A − − 790 mV IF = 1 A; Tj = 100 °C − − 690 mV IR reverse current VR = VRRMmax; note 1; see Fig.3 − − 0.5 mA VR = VRRMmax; Tj = 100 °C; note 1; see Fig.3 − − 5 mA Cd diode capacitance VR = 4 V; f = 1 MHz; see Fig.4 − − 100 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 80 K/W |
Codice articolo simile - BYG90-90 |
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Descrizione simile - BYG90-90 |
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