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BYG90-90 Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte BYG90-90
Spiegazioni elettronici  Schottky barrier rectifier diode
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYG90-90 Scheda tecnica(HTML) 3 Page - NXP Semiconductors

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1996 May 13
3
Philips Semiconductors
Product specification
Schottky barrier rectifier diode
BYG90-90
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD106A standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
see Fig.2; note 1
IF = 0.06 A
360
mV
IF = 1 A
790
mV
IF = 1 A; Tj = 100 °C
690
mV
IR
reverse current
VR = VRRMmax; note 1; see Fig.3
0.5
mA
VR = VRRMmax; Tj = 100 °C; note 1;
see Fig.3
5
mA
Cd
diode capacitance
VR = 4 V; f = 1 MHz; see Fig.4
100
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
80
K/W


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