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BYD17 Scheda tecnica(PDF) 3 Page - NXP Semiconductors

Il numero della parte BYD17
Spiegazioni elettronici  General purpose controlled avalanche rectifiers
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYD17 Scheda tecnica(HTML) 3 Page - NXP Semiconductors

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1999 Nov 11
3
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm, see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
IF(AV)
average forward current
Ttp = 105 °C;
averaged over any 20 ms period;
see Figs 2 and 4
1.5
A
Tamb =65 °C; PCB mounting (see
Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
0.6
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj =Tj max prior to surge;
VR =VRRMmax
20
A
ERSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
7mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
see Fig.5
−65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max; see Fig.6
−−
0.93
V
IF = 1 A; see Fig.6
−−
1.05
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYD17D
225
−−
V
BYD17G
450
−−
V
BYD17J
650
−−
V
BYD17K
900
−−
V
BYD17M
1100
−−
V
IR
reverse current
VR =VRRMmax; see Fig.7
−−
1
µA
VR =VRRMmax; Tj = 165 °C; see Fig.7
−−
100
µA
trr
reverse recovery time
when switched from IF = 0.5 A to IR =1A;
measured at IR = 0.25 A; see Fig.10
3
−µs
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.8
21
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
30
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT


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