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BYC10B-600 Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BYC10B-600 Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 10 A; Tj = 150˚C - 1.4 1.8 V I F = 20 A; Tj = 150˚C - 1.7 2.3 V I F = 10 A; - 2.0 2.8 V I R Reverse current V R = 600 V - 9 200 µA V R = 500 V; Tj = 100 ˚C - 1.1 3.0 mA t rr Reverse recovery time I F = 10 A to VR = 400 V; - 19 - ns dI F/dt = 500 A/µs t rr Reverse recovery time I F = 10 A to VR = 400 V; - 32 40 ns dI F/dt = 500 A/µs; Tj = 125˚C I rrm Peak reverse recovery current I F = 10 A to VR = 400 V; - 9.5 12 A dI F/dt = 500 A/µs; Tj = 125˚C V fr Forward recovery voltage I F = 10 A; dIF/dt = 100 A/µs- 8 11 V Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction, mode where the transistor turns on whilst forward current is still flowing in the diode. Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. Vin Vo = 400 V d.c. 500 V MOSFET IL 150 uH ID OUTPUT DIODE typ Vin Vin = 400 V d.c. inductive load IF IR IL September 1998 2 Rev 1.100 |
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