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BYC10B-600 Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
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BYC10B-600 Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 6 page Philips Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss Fig.3. Maximum forward dissipation as a function of average forward current; rectangular current waveform where I F(AV) =IF(RMS) x √D. Fig.4. Typical reverse recovery switching losses in diode, as a function of rate of change of current dI F/dt. Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dI F/dt. Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Fig.7. Typical reverse recovery time t rr, as a function of rate of change of current dI F/dt. Fig.8. Typical peak reverse recovery current, I rrm as a function of rate of change of current dI F/dt. 0 5 10 15 0 5 10 15 20 25 30 0.5 0.2 0.1 BYC10-600 Rs = 0.05 Ohms Vo = 1.3 V D = 1.0 150 Average forward current, IF(AV) (A) Forward dissipation, PF (W) Tmb(max) C 140 130 120 110 100 90 D = tp tp T T t I time ID Irrm VD dIF/dt ID = IL losses due to diode reverse recovery 100 1000 0 0.05 0.1 0.15 0.2 0.25 Rate of change of current, dIF/dt (A/us) f = 20 kHz Diode reverse recovery switching losses, Pdsw (W) IF = 5 A 20 A 10 A Tj = 125 C VR = 400 V 100 1000 10 100 BYC10-600 Rate of change of current, dIF/dt (A/us) Reverse recovery time, trr (ns) Tj = 125 C VR = 400 V IF = 5 A 20 A 10 A 100 1000 0 1 2 3 4 5 6 7 8 BYC10-600 Rate of change of current, dIF/dt (A/us) Transistor losses due to diode reverse recovery, Ptsw (W) IF = 5 A 10 A 20 A f = 20 kHz Tj = 125 C VR = 400 V 100 1000 1 10 100 BYC10-600 Rate of change of current, dIF/dt (A/us) Peak reverse recovery current, Irrm (A) Tj = 125 C VR = 400 V IF = 5 A 20 A September 1998 3 Rev 1.100 |
Codice articolo simile - BYC10B-600 |
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Descrizione simile - BYC10B-600 |
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