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BY479X-1700 Scheda tecnica(PDF) 2 Page - NXP Semiconductors

Il numero della parte BY479X-1700
Spiegazioni elettronici  Damper diode fast, high-voltage
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BY479X-1700 Scheda tecnica(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Damper diode
BY479X-1700
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
4.8
K/W
heatsink
without heatsink compound
-
-
5.9
K/W
R
th j-a
Thermal resistance junction to
in free air
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 6.5 A
-
0.95
1.3
V
I
F = 6.5 A; Tj = 125 ˚C
-
0.85
1.2
V
I
R
Reverse current
V
R = VRWMmax
-
-
0.25
mA
V
R = VRWMmax; Tj = 125 ˚C
-
-
1.0
mA
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
fr
Forward recovery voltage
I
F = 6.5 A; dIF/dt = 50 A/µs
-
12
19
V
t
fr
Forward recovery time
I
F = 6.5 A; dIF/dt = 50 A/µs; VF = 5 V
-
200
300
ns
I
F = 6.5 A; dIF/dt = 50 A/µs; VF = 2 V
-
400
-
ns
t
rr
Reverse recovery time
I
F = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V
-
250
350
ns
Q
s
Reverse recovery charge
I
F = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V
-
2.0
3.0
µC
September 1998
2
Rev 1.200


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