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FCD4N60 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FCD4N60 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
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1 / 8 page  ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCD4N60 Rev. B October 2006 SuperFET TM FCD4N60 600V N-Channel MOSFET Features •650V @TJ = 150°C •Typ. RDS(on) = 1.0Ω • Ultra low gate charge (typ. Qg = 12.8nC) • Low effective output capacitance (typ. Coss.eff = 32pF) • 100% avalanche tested Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D-PAK FCD Series GS D D G S Absolute Maximum Ratings Symbol Parameter FCD4N60 Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 3.9 2.5 A A IDM Drain Current - Pulsed (Note 1) 11.7 A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 128 mJ IAR Avalanche Current (Note 1) 3.9 A EAR Repetitive Avalanche Energy (Note 1) 5.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 50 0.4 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Thermal Characteristics Symbol Parameter FCD4N60 Unit RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 83 °C/W |
Codice articolo simile - FCD4N60 |
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