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BY359F-1500S Scheda tecnica(PDF) 2 Page - NXP Semiconductors |
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BY359F-1500S Scheda tecnica(HTML) 2 Page - NXP Semiconductors |
2 / 5 page Philips Semiconductors Preliminary specification Damper diode BY359F-1500, BY359F-1500S fast, high-voltage STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated BY359F-1500 BY359F-1500S SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT V F Forward voltage I F = 20 A 1.3 1.8 1.5 2.0 V I F = 10 A; Tj = 150˚C 1.00 1.5 1.25 1.75 V I R Reverse current V R = 1300 V 10 100 10 100 µA V R = 1300 V; 50 300 100 600 µA T j = 100 ˚C DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated BY359F-1500 BY359F-1500S SYMBOL PARAMETER CONDITIONS TYP. MAX. TYP. MAX. UNIT t rr Reverse recovery time I F = 2 A; VR ≥ 30 V; 0.47 0.60 0.28 0.35 µs Q s Reverse recovery charge -dI F/dt = 20 A/µs 1.6 2.0 0.70 0.95 µC V fr Peak forward recovery voltage I F = 10 A; 11.0 - 17.0 - V dI F/dt = 30 A/µs Fig.1. Definition of t rr, Qs and Irrm Fig.2. Definition of V fr 100% time dI dt F I R I F I rrm trr 25% Qs time time V F V fr V F I F September 1998 2 Rev 1.300 |
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