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PZT5401-AA3-R Scheda tecnica(PDF) 3 Page - Unisonic Technologies |
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PZT5401-AA3-R Scheda tecnica(HTML) 3 Page - Unisonic Technologies |
3 / 4 page PZT5401 PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw QW-R207-013,A TYPICAL CHARACTERICS Fig.2 DC current Gain Ic,Collector current (mA) 10 2 10 1 10 0 10 3 3 2 1 0 -1 VCE=-5V Fig.3 Base-Emitter on Voltage 0 1 2 Base-Emitter voltage (V) 0 -0.2 -0.4 -0.6 -0.8 -1.0 VCE=-5V Ic,Collector current (mA) 3 2 1 0 -1 Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.1 Collector output Capacitance VCE(sat) VBE(sat) Ic=10*IB Ic,Collector current (mA) 01 2 3 0 1 2 VCE=-10V Collector-Base voltage (V) 3 01 2 0 2 4 6 8 10 f=1MHz IE=0 3 1 0 -1 -2 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 10 10 10 10 -10 -10 -10 -10 |
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