2SK3050 datasheet(2/6 Pages) ROHM

Il numero della parte	2SK3050

Spiegazioni elettronici	10V Drive Nch MOS FET

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Produttore elettronici	ROHM [Rohm]

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2SK3050

Transistors

Rev.A

2/5

Electrical characteristics (Ta=25

°C)

Parameter

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

Symbol

IGSS

V(BR)DSS

IDSS

VGS(th)

RDS(on)

Ciss

| Yfs

|

Coss

Crss

Min.

−

600

−

2.0

−

0.5

−

4.4

280

1.0

48

16

±100

−

100

4.0

5.5

−

nA

VGS

=±30V, VDS=0V

ID

=1mA, VGS=0V

VDS

=600V, VGS=0V

VDS

=10V, ID=1mA

ID

=1A, VGS=10V

VDS

=10V

ID

=1A, VDS=10V

VGS

=0V

f

=1MHz

V

µA

V

Ω

pF

S

pF

td(on)

−

12

−

ns

tr

−

17

−

VGS

=10V

ns

td(off)

−

29

−

RL

=300Ω

ns

tf

−

105

−

RG

=10Ω

ns

Qg

−

12.8

25.6

VDD

=300V

VGS

=10V

ID

=2A

nC

Qgd

−

5.5

−

nC

Typ.

Max.

Unit

Conditions

ID

=1A, VDD 300V

∗ Pulsed

∗

Qgs

−

3.3

−

nC

∗

Body diode characteristics (Source-drain) (Ta=25

°C)

VSD

−−

2.0

V

IS= 2A, VGS=0V

Forward voltage

trr

−

460

−

ns

IDR=2A, VGS=0V

di/dt= 100A /

µs

Reverse recovery time

Qrr

−

2.0

−µC

Reverse recovery charge

∗ Pulsed

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗

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