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2SC1815L-GR-T92-E-K Datasheet(Scheda tecnica) 2 Page - Unisonic Technologies

Numero della parte 2SC1815L-GR-T92-E-K
Dettagli  AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
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Produttore  UTC [Unisonic Technologies]
Homepage  http://www.utc-ic.com
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2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-006,D
ABSOLUTE MAXIMUM RATING (Ta=25℃,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
50
mA
Collector dissipation(Ta=25℃)
PC
400
mW
Junction Temperature
TJ
+125
Storage Temperature
TSTG
-55 ~ +125
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-off Current
ICBO
VCB=60V, IE=0
100
nA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
100
nA
Collector-Emitter Saturation Voltage
VCE(SAT) IC=100mA, IB=10mA
0.1
0.25
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=100mA, IB=10mA
1.0
V
DC Current Gain(note)
hFE1
hFE2
VCE=6V, IC=2mA
VCE=6V, IC=150mA
120
25
700
Current Gain Bandwidth Product
fT
VCE=10V, IC=50mA
80
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
2.0
3.0
pF
Noise Figure
NF
IC=-0.1mA, VCE=6V
RG=10kΩ, f=100Hz
1.0
1.0
dB
CLASSIFICATION OF hFE1
RANK
Y
GR
BL
RANGE
120-240
200-400
350-700




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