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MJE5850G Scheda tecnica(PDF) 3 Page - ON Semiconductor

Il numero della parte MJE5850G
Spiegazioni elettronici  8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE5850G Scheda tecnica(HTML) 3 Page - ON Semiconductor

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MJE5850, MJE5851, MJE5852
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
MJE5850
(IC = 10 mA, IB = 0)
MJE5851
MJE5852
VCEO(sus)
300
350
400
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
0.5
2.5
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 W, TC = 100_C)
ICER
3.0
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 12
Clamped Inductive SOA with base reverse biased
RBSOA
See Figure 13
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 2.0 Adc, VCE = 5 Vdc)
(IC = 5.0 Adc, VCE = 5 Vdc)
hFE
15
5
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 3.0 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
VCE(sat)
2.0
5.0
2.5
Vdc
Base−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 1.0 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
VBE(sat)
1.5
1.5
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
270
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,
tp = 50 ms, Duty Cycle v 2%)
td
0.025
0.1
ms
Rise Time
tr
0.100
0.5
ms
Storage Time
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,
VBE(off) = 5 Vdc, tp = 50 ms, Duty Cycle v 2%)
ts
0.60
2.0
ms
Fall Time
tf
0.11
0.5
ms
Inductive Load, Clamped (Table 1)
Storage Time
(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 Vdc, TC = 100_C)
tsv
0.8
3.0
ms
Crossover Time
tc
0.4
1.5
ms
Fall Time
tfi
0.1
ms
Storage Time
(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 Vdc, TC = 25_C)
tsv
0.5
ms
Crossover Time
tc
0.125
ms
Fall Time
tfi
0.1
ms
2. Pulse Test: PW = 300
ms. Duty Cycle v 2%


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