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MJ11029G Scheda tecnica(PDF) 1 Page - ON Semiconductor

Il numero della parte MJ11029G
Spiegazioni elettronici  High?묬urrent Complementary Silicon Power Transistors
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Produttore elettronici  ONSEMI [ON Semiconductor]
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© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 5
1
Publication Order Number:
MJ11028/D
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High−Current
Complementary Silicon
Power Transistors
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
Curves to 100 A (Pulsed)
Diode Protection to Rated IC
Monolithic Construction with Built−In Base−Emitter Shunt Resistor
Junction Temperature to +200_C
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJ11028/29
MJ11030
MJ11032/33
VCEO
60
90
120
Vdc
Collector−Base Voltage
MJ11028/29
MJ11030
MJ11032/33
VCBO
60
90
120
Vdc
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
− Peak (Note 1)
IC
50
100
Adc
Base Current − Continuous
IB
2.0
Adc
Total Power Dissipation @ TC = 25°C
Derate Above 25
°C @ TC = 100_C
PD
300
1.71
W
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
− 55 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Maximum Lead Temperature for
Soldering Purposes for
v 10 seconds
TL
275
_C
Thermal Resistance, Junction−to−Case
RqJC
0.58
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5
ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−204 (TO−3)
CASE 197A
STYLE 1
50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60 − 120 VOLTS
300 WATTS
MARKING DIAGRAM
MJ110xx = Device Code
xx = 28, 29, 30, 32, 33
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
http://onsemi.com
MJ110xxG
AYYWW
MEX
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION


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