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BC558BZL1 Scheda tecnica(PDF) 5 Page - ON Semiconductor

Il numero della parte BC558BZL1
Spiegazioni elettronici  Amplifier Transistors PNP Silicon
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Produttore elettronici  ONSEMI [ON Semiconductor]
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BC558BZL1 Scheda tecnica(HTML) 5 Page - ON Semiconductor

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BC556B, BC557A, B, C, BC558B, C
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Figure 13. Thermal Response
t, TIME (ms)
1.0
2.0
5.0
1.0
0.5
0.2
0.1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0k
2.0k
5.0k
10
Figure 14. Active Region − Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−200
−1.0
TA = 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZqJC(t) = (t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
−100
−50
−10
−5.0
−2.0
−5.0
−10
−30 −45 −65 −100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC−VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.


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