BDW42_05 datasheet(4/7 Pages) ONSEMI

Il numero della parte	BDW42

Spiegazioni elettronici	Darlington Complementary Silicon Power Transistors

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BDW42 − NPN, BDW46, BDW47 − PNP

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ACTIVE−REGION SAFE OPERATING AREA

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITED

@ TC = 25°C (SINGLE PULSE)

50

1.0

Figure 5. BDW42

20

2.0

0.05

10

20

100

TJ = 25°C

BDW42

1.0 ms

0.1 ms

0.2

5.0

0.5

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

10

30

70

1.0

0.1

0.5 ms

dc

2.0

50

3.0

5.0

7.0

Figure 6. BDW46 and BDW47

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITED

@ TC = 25°C (SINGLE PULSE)

50

1.0

20

2.0

0.05

10

20

100

TJ = 25°C

BDW46

BDW47

1.0 ms

0.1 ms

0.2

5.0

0.5

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

10

30

70

1.0

0.1

0.5 ms

dc

2.0

50

3.0

5.0

7.0

There are two limitations on the power handling ability of a

transistor:

average

junction

temperature

and

second

breakdown. Safe operating area curves indicate IC − VCE limits

of the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

than the curves indicate. The data of Figure 5 and 6 is based on

TJ(pk) = 200

_C; TC is variable depending on conditions.

Second breakdown pulse limits are valid for duty cycles to

10% provided TJ(pk)

v 200_C. TJ(pk) may be calculated from

the data in Figure 4. At high case temperatures, thermal

limitations will reduce the power that can be handled to values

less than the limitations imposed by second breakdown.

*Linear extrapolation

10,000

1.0

Figure 7. Small−Signal Current Gain

f, FREQUENCY (kHz)

10

2.0

5.0

10

20

50

100

200

1000

500

300

100

5000

20

3000

200

500

2000

1000

30

50

BDW46, 47 (PNP)

BDW42 (NPN)

TJ = 25°C

VCE = 3.0 V

IC = 3.0 A

300

0.1

Figure 8. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30

1.0

2.0

5.0

20

100

10

200

100

70

50

TJ = + 25°C

Cib

Cob

50

0.2

0.5

BDW46, 47 (PNP)

BDW42 (NPN)

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