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74HC74 Scheda tecnica(PDF) 3 Page - ON Semiconductor

Il numero della parte 74HC74
Spiegazioni elettronici  Dual D Flip?묯lop with Set and Reset High?뭁erformance Silicon?묰ate CMOS
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

74HC74 Scheda tecnica(HTML) 3 Page - ON Semiconductor

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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
(V)
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C
v 125_C
VIH
Minimum High−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum Low−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
VOH
Minimum High−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL |Iout| v 2.4 mA
|Iout| v 4.0 mA
|Iout| v 5.2 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
VOL
Maximum Low−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL |Iout| v 2.4 mA
|Iout| v 4.0 mA
|Iout| v 5.2 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
Iin
Maximum Input Leakage Current
Vin = VCC or GND
6.0
±0.1
±1.0
±1.0
mA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 mA
6.0
2.0
20
80
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Symbol
Parameter
VCC
(V)
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C
v 125_C
fmax
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 4)
2.0
3.0
4.5
6.0
6.0
15
30
35
4.8
10
24
28
4.0
8.0
20
24
MHz
tPLH,
tPHL
Maximum Propagation Delay, Clock to Q or Q
(Figures 1 and 4)
2.0
3.0
4.5
6.0
100
75
20
17
125
90
25
21
150
120
30
26
ns
tPLH,
tPHL
Maximum Propagation Delay, Set or Reset to Q or Q
(Figures 2 and 4)
2.0
3.0
4.5
6.0
105
80
21
18
130
95
26
22
160
130
32
27
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
3.0
4.5
6.0
75
30
15
13
95
40
19
16
110
55
22
19
ns
Cin
Maximum Input Capacitance
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
CPD
Power Dissipation Capacitance (Per Flip−Flop)*
Typical @ 25°C, VCC = 5.0 V
pF
32
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).


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