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STP12IE95F4 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STP12IE95F4 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 11 page Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. January 2007 Rev 1 1/11 11 Order codes Part Number Marking Package Packing STP12IE95F4 P12IE95F4 TO220FP-4L Tube STP12IE95F4 Emitter Switched Bipolar Transistor ESBT® 950 V - 12 A - 0.083 Ω General features ■ High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz ■ Squared RBSOA up to 950V ■ Very low Ciss driven by RG = 47Ω ■ Very low turn-off cross over time Applications ■ Flyback SMPS for adapter ■ Flyback / forward SMPS for desktop Description The STP12IE95F4 is manufactured in Monolithic ESBT Technology, aimed to provide best perfor- mances in high frequency / high voltage applica- tions. It is designed for use in Gate Driven based topolo- gies. Internal schematic diagrams VCS(ON) IC RCS(ON) 1V 12A 0.083 W TO220FP-4L www.st.com |
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