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STGP7NB60K Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STGP7NB60K
Spiegazioni elettronici  N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP7NB60K Scheda tecnica(HTML) 5 Page - STMicroelectronics

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Electrical characteristics
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Table 5.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Current rise time
VCC = 480V, IC = 7A
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 18)
15
6
ns
ns
(di/dt)on
Eon
(1)
1.
Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
Turn-on delay time
Turn-on switching losses
VCC = 480V, IC = 7A
RG= 10Ω, VGE= 15V,
Tj=125°C (see Figure 18)
980
95
A/µs
µJ
tc
tr(Voff)
td(off)
tf
Eoff
(2)
Ets
2.
Turn-off losses include also the tail of the collector current
Cross-over time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-off switching losses
Total switching losses
VCC = 480V, IC = 7A,
RGE = 10Ω, VGE = 15V,
TJ=25°C (see Figure 18)
105
30
50
100
140
200
ns
ns
ns
ns
µJ
µJ
tc
tr(Voff)
td(off)
tf
Eoff
(1)
Ets
Cross-over time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-off switching losses
Total switching losses
VCC = 480V, IC = 7A,
RGE=10Ω, VGE =15V,
Tj=125°C (see Figure 18)
227
68
52
150
300
395
ns
ns
ns
ns
µJ
µJ


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