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STGF20NB60S Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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STGF20NB60S Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 11 page STGF20NB60S 2/11 Table 3: Absolute Maximum ratings ( ) Pulse width limited by safe operating area Table 4: Thermal Data ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off (#) Calculated according to the iterative formula: Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C (#) 24 A IC Collector Current (continuous) at TC = 100°C (#) 13 A ICM ( ) Collector Current (pulsed) 70 A PTOT Total Dissipation at TC = 25°C 40 W Derating Factor 0.32 W/°C VISO Insulation withstand voltage AC (t=1sec, Tc=25°C) 2500 V Tstg Storage Temperature –55 to 150 °C Tj Operating Junction Temperature range Min. Typ. Max. Rthj-case Thermal Resistance Junction-case 3.15 °C/W Rthj-amb Thermal Resistance Junction-ambient 62.5 °C/W TL Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 600 V ICES Collector cut-off Current (VGE = 0) VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C 10 100 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20V , VCE = 0 ±100 nA VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA 2.5 5 V VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 20 A, Tj= 25°C VGE = 15V, IC = 20A, Tj=150°C 1.25 1.2 1.7 V V I C T C () T JMAX T C – R THJ C – V CESAT MAX () TC IC , () × -------------------------------------------------------------------------------------------------- = |
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