STGD10NC60KD datasheet(4/15 Pages) STMICROELECTRONICS

Il numero della parte	STGD10NC60KD

Spiegazioni elettronici	N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT

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Electrical characteristics

STGD6NC60HD

4/15

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC= 1mA, VGE= 0

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15V, IC= 3A

VGE= 15V, IC= 3A, Tc= 125°C

1.9

1.7

2.5

V

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250 µA

3.75

5.75

V

ICES

Collector cut-off current

(VGE = 0)

VCE= Max rating,TC= 25°C

VCE=Max rating,TC= 125°C

10

1

µA

mA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20V, VCE= 0

±100

nA

gfs

Forward transconductance

VCE = 15V, IC= 3A

3S

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

205

32

5.5

pF

Qg

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390V, IC = 3A,

VGE = 15V,

(see Figure 17)

13.6

3.4

5.1

nC

ICL

Turn-off SOA minimum

current

Vclamp=390V, Tj=150°C,

RG=10Ω, VGE=15V

19

A

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