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STD100NH02LT4 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STD100NH02LT4 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 16 page STD100NH02L Electrical ratings 3/16 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit Vspike (1) 1. Garanted when external Rg = 4.7 Ω and tf < tfmax. Drain-source voltage rating 30 V VDS Drain-source voltage (VGS = 0) 24 V VDGR Drain-gate voltage (RGS = 20KΩ)24 V VGS Drain-source voltage ± 20 V ID (2) 2. Value limited by wire bonding. Drain current (continuous) at TC = 25°C 60 A ID (2) Drain current (continuous) at TC=100°C 60 A IDM (3) 3. Pulse width limited by safe operating area Drain current (pulsed) 240 A PTOT Total dissipation at TC = 25°C 100 W Derating factor 0.67 W/°C EAS (4) 4. Starting TJ = 25 oC, I D = 30A, VDD = 15V Single pulse avalanche energy 800 mJ Tstg Storage temperature -55 to 175 °C TJ Max. operating junction temperature Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case Max 1.5 °C/W RthJA Thermal resistance junction-ambient Max 100 °C/W Tl Maximum lead temperature for soldering purpose 275 °C |
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