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STB80NE03L-06 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STB80NE03L-06 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 13 page STB80NE03L-06 Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VDGR Drain-gate voltage (RGS = 20 kΩ) 30 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 80 A ID Drain current (continuous) at TC = 100°C 60 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 320 A Derating factor 1 PTOT Total dissipation at TC = 25°C 150 W dv/dt (2) 2. ISD < 20A, di/dt < 100A/µs, VDD = 80% V(BR)DSS Peak diode recovery voltage slope 7 V/ns TJ Tstg Operating junction temperature Storage temperture -55 to 175 °C Table 2. Thermal resistance Symbol Parameter Value Unit RthJC Thermal resistance junction-case Max 1 °C/W RthJA Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 80 A EAS Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V) 600 mJ |
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