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STB70NF3LLT4 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STB70NF3LLT4 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 13 page STB70NF3LL Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VDGR Drain-gate voltage (RGS = 20 kΩ)30 V VGS Gate- source voltage ± 16 V ID (1) 1. Current limited by the package Drain current (continuous) at TC = 25°C 70 A ID Drain current (continuous) at TC = 100°C 50 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 280 A PTOT Total dissipation at TC = 25°C 100 W Derating factor 0.67 W/°C dv/dt (3) 3. ISD ≤70A, di/dt ≤350A/µs, VDD ≤V(BR)DSS, TJ ≤TJMAX Peak diode recovery voltage slope 5.5 V/ns EAS (4) 4. Starting TJ = 25 oC, I D = 35A, VDD = 25V Single pulse avalanche energy 500 mJ Tstg Storage temperature -55 to 175 °C TJ Operating junction temperature Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case Max 1.5 °C/W RthJA Thermal resistance junction-ambient Max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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