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MJE5852 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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MJE5852 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 4 page MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR s HIGH VOLTAGE CAPABILITY APPLICATIONS: s SWITCHING REGULATORS s MOTOR CONTROL s INVERTERS DESCRIPTION The MJE5852 is manufactured using High Voltage PNP Multi-Epitaxial technology for high switching speed and high voltage capability. It is intended for use in high frequency and efficiency converters, switching regulators and motor control. ® INTERNAL SCHEMATIC DIAGRAM September 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) -450 V VCEO Collector-Emitter Voltage (IB = 0) -400 V VEBO Emitter-Base Voltage (IC = 0) -7 V IC Collector Current -8 A ICM Collector Peak Current (tp < 5ms) -16 A IB Base Current -4 A IBM Base Peak Current (tp < 5ms) -8 A Ptot Total Dissipation at Tc ≤ 25 oC 80 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 1 2 3 TO-220 1/4 |
Codice articolo simile - MJE5852_03 |
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Descrizione simile - MJE5852_03 |
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