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STB300NH02L Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STB300NH02L
Spiegazioni elettronici  N-channel 24V - 120A - TO-220 / D2PAK STripFET TM Power MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB300NH02L Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STB300NH02L - STP300NH02L
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
24
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 20V,
VDS = 20V, Tc=125°C
1
10
µA
µA
IGSS
Gate body leakage
current (VDS = 0)
VDS = ±20V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
12
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 80A
TO-220
D²PAK
1.8
1.4
2.2
1.8
m
Ω
m
Ω
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 80A
@100°C
TO-220
D²PAK
2.7
2.1
m
Ω
m
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15V, f = 1 MHz, VGS =0
7055
3251
307
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 12V,ID= 120A,
VGS= 10V
(see Figure 13)
109.4
30.2
26.4
nC
nC
nC
RG
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
4.4
Ω


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