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2N3055AG Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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2N3055AG Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 6 1 Publication Order Number: 2N3055A/D 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBase t complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. Features • Current−Gain − Bandwidth−Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) − NPN = 2.2 MHz (Min) − PNP • Safe Operating Area − Rated to 60 V and 120 V, Respectively • Pb−Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N3055A MJ15015, MJ15016 VCEO 60 120 Vdc Collector−Base Voltage 2N3055A MJ15015, MJ15016 VCBO 100 200 Vdc Collector−Emitter Voltage Base Reversed Biased 2N3055A MJ15015, MJ15016 VCEV 100 200 Vdc Emitter−Base Voltage VEBO 7.0 Vdc Collector Current − Continuous IC 15 Adc Base Current IB 7.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25 _C 2N3055A Total Device Dissipation @ TC = 25_C Derate above 25 _C MJ15015, MJ15016 PD 115 0.65 180 1.03 W W/ _C Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 _C THERMAL CHARACTERISTICS Characteristics Symbol Max Max Unit Thermal Resistance, Junction−to−Case RqJC 1.52 0.98 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. (2N3055A) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS − 115, 180 WATTS http://onsemi.com MARKING DIAGRAMS 2N3055AG AYWW MEX TO−204AA (TO−3) CASE 1−07 STYLE 1 2N3055A = Device Code MJ1501x = Device Code x = 5 or 6 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin Preferred devices are recommended choices for future use and best overall value. MJ1501xG AYWW MEX See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION |
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