BD135-10 datasheet(2/4 Pages) STMICROELECTRONICS

Il numero della parte	BD135-10

Spiegazioni elettronici	NPN SILICON TRANSISTORS

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

10

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 30 V

TC = 125

oC

0.1

10

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

10

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

for BD135

for BD139

45

80

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.05 A

0.5

V

VBE

∗

Base-Emitter Voltage

IC = 0.5 A

VCE = 2 V

1

V

hFE

∗

DC Current Gain

IC = 5 mA

VCE = 2 V

IC = 150 mA

VCE = 2 V

IC = 0.5 A

VCE = 2 V

25

40

25

250

hFE

hFE Groups

IC = 150 mA

VCE = 2 V

for BD135/BD139 group-10

for BD135/BD139 group-16

63

100

160

250

* Pulsed: Pulse duration = 300

µs, duty cycle 1.5 %

Safe Operating Area

BD135 / BD139

2/4

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