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BD135-10 Scheda tecnica(PDF) 2 Page - STMicroelectronics |
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BD135-10 Scheda tecnica(HTML) 2 Page - STMicroelectronics |
2 / 4 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 10 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 30 V VCB = 30 V TC = 125 oC 0.1 10 µA µA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 10 µA VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 30 mA for BD135 for BD139 45 80 V V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 0.5 A IB = 0.05 A 0.5 V VBE ∗ Base-Emitter Voltage IC = 0.5 A VCE = 2 V 1 V hFE ∗ DC Current Gain IC = 5 mA VCE = 2 V IC = 150 mA VCE = 2 V IC = 0.5 A VCE = 2 V 25 40 25 250 hFE hFE Groups IC = 150 mA VCE = 2 V for BD135/BD139 group-10 for BD135/BD139 group-16 63 100 160 250 * Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area BD135 / BD139 2/4 |
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