Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

M40Z300MQ6TR Scheda tecnica(PDF) 8 Page - STMicroelectronics

Il numero della parte M40Z300MQ6TR
Spiegazioni elettronici  5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
Download  21 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M40Z300MQ6TR Scheda tecnica(HTML) 8 Page - STMicroelectronics

Back Button M40Z300MQ6TR Datasheet HTML 4Page - STMicroelectronics M40Z300MQ6TR Datasheet HTML 5Page - STMicroelectronics M40Z300MQ6TR Datasheet HTML 6Page - STMicroelectronics M40Z300MQ6TR Datasheet HTML 7Page - STMicroelectronics M40Z300MQ6TR Datasheet HTML 8Page - STMicroelectronics M40Z300MQ6TR Datasheet HTML 9Page - STMicroelectronics M40Z300MQ6TR Datasheet HTML 10Page - STMicroelectronics M40Z300MQ6TR Datasheet HTML 11Page - STMicroelectronics M40Z300MQ6TR Datasheet HTML 12Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 8 / 21 page
background image
M40Z300, M40Z300W
8/21
Figure 8. Address-Decode Time
Note: During system design, compliance with the SRAM timing parameters must comprehend the propagation delay between E1CON -
E4CON.
Data Retention Lifetime Calculation
Most low power SRAMs on the market today can
be used with the M40Z300/W NVRAM SUPERVI-
SOR. There are, however some criteria which
should be used in making the final choice of which
SRAM to use. The SRAM must be designed in a
way where the chip enable input disables all other
inputs to the SRAM. This allows inputs to the
M40Z300/W and SRAMs to be “Don't Care” once
VCC falls below VPFD(min). The SRAM should also
guarantee data retention down to VCC = 2.0V. The
chip enable access time must be sufficient to meet
the system needs with the chip enable propaga-
tion delays included. If the SRAM includes a sec-
ond chip enable pin (E2), this pin should be tied to
VOUT.
If data retention lifetime is a critical parameter for
the system, it is important to review the data reten-
tion
current
specifications
for
the
particular
SRAMs being evaluated. Most SRAMs specify a
data retention current at 3.0V. Manufacturers gen-
erally specify a typical condition for room temper-
ature along with a worst case condition (generally
at elevated temperatures). The system level re-
quirements will determine the choice of which val-
ue to use.
The data retention current value of the SRAMs can
then be added to the IBAT value of the M40Z300/
W to determine the total current requirements for
data retention. The available battery capacity for
the SNAPHAT® of your choice can then be divided
by this current to determine the amount of data re-
tention available (see Table 13., page 19).
CAUTION: Take care to avoid inadvertent dis-
charge through VOUT and E1CON - E4CON after
battery has been attached.
For a further more detailed review of lifetime calcu-
lations, please see Application Note AN1012.
Power-on Reset Output
All microprocessors have a reset input which forc-
es them to a known state when starting. The
M40Z300/W has a reset output (RST) pin which is
guaranteed to be low within tWPT of VPFD (see 7).
This signal is an open drain configuration. An ap-
propriate pull-up resistor should be chosen to con-
trol the rise time. This signal will be valid for all
voltage conditions, even when VCC equals VSS.
Once VCC exceeds the power failure detect volt-
age VPFD, an internal timer keeps RST low for
tREC to allow the power supply to stabilize.
Battery Low Pin
The M40Z300/W automatically performs battery
voltage monitoring upon power-up, and at factory-
programmed time intervals of at least 24 hours.
The Battery Low (BL) pin will be asserted if the
battery voltage is found to be less than approxi-
mately 2.5V. The BL pin will remain asserted until
completion of battery replacement and subse-
quent battery low monitoring tests, either during
the next power-up sequence or the next scheduled
24-hour interval.
If a battery low is generated during a power-up se-
quence, this indicates that the battery is below
2.5V and may not be able to maintain data integrity
in the SRAM. Data should be considered suspect,
and verified as correct. A fresh battery should be
installed.
If a battery low indication is generated during the
24-hour interval check, this indicates that the bat-
tery is near end of life. However, data is not com-
promised due to the fact that a nominal VCC is
supplied. In order to insure data integrity during
subsequent periods of battery back-up mode, the
battery should be replaced. The SNAPHAT® top
should be replaced with valid VCC applied to the
device.
AI02551
A, B
E
E1CON - E4CON
tAS
tEDH
tEDL


Codice articolo simile - M40Z300MQ6TR

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics
M40Z300MQ6E STMICROELECTRONICS-M40Z300MQ6E Datasheet
221Kb / 25P
   5V or 3V NVRAM supervisor for up to 8 LPSRAMs
M40Z300MQ6E STMICROELECTRONICS-M40Z300MQ6E Datasheet
431Kb / 25P
   5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
M40Z300MQ6F STMICROELECTRONICS-M40Z300MQ6F Datasheet
221Kb / 25P
   5V or 3V NVRAM supervisor for up to 8 LPSRAMs
M40Z300MQ6F STMICROELECTRONICS-M40Z300MQ6F Datasheet
431Kb / 25P
   5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
More results

Descrizione simile - M40Z300MQ6TR

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
STMicroelectronics
M40Z300 STMICROELECTRONICS-M40Z300_07 Datasheet
221Kb / 25P
   5V or 3V NVRAM supervisor for up to 8 LPSRAMs
M40Z111 STMICROELECTRONICS-M40Z111_07 Datasheet
180Kb / 21P
   5V or 3V NVRAM supervisor for up to two LPSRAMs
M40Z111 STMICROELECTRONICS-M40Z111 Datasheet
107Kb / 15P
   5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
M40Z300AV STMICROELECTRONICS-M40Z300AV Datasheet
272Kb / 20P
   3V NVRAM Supervisor for Up to 8 LPSRAMs
M40SZ100Y STMICROELECTRONICS-M40SZ100Y Datasheet
285Kb / 19P
   5V or 3V NVRAM SUPERVISOR FOR LPSRAM
M40Z300 STMICROELECTRONICS-M40Z300_10 Datasheet
431Kb / 25P
   5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs
M40SZ100Y STMICROELECTRONICS-M40SZ100Y_07 Datasheet
230Kb / 25P
   5V or 3V NVRAM supervisor for LPSRAM
M40SZ100Y STMICROELECTRONICS-M40SZ100Y_10 Datasheet
442Kb / 24P
   5 V or 3 V NVRAM supervisor for LPSRAM
M41ST85Y STMICROELECTRONICS-M41ST85Y Datasheet
530Kb / 34P
   5.0 OR 3.0V, 512 bit 64 x 8 SERIAL RTC and NVRAM SUPERVISOR
M40Z300 STMICROELECTRONICS-M40Z300 Datasheet
128Kb / 16P
   NVRAM CONTROLLER for up to EIGHT LPSRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21


Scheda tecnica Scarica

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEETIT.COM
Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com