Specifically designed for Automotive applications, this design of

utilizes the lastest processing

techniques to achieve extremely low on-resistance per silicon area.

Additional features of this HEXFET power MOSFET are a 175°C

junction operating temperature, fast switching speed and improved

repetitive avalanche rating. These combine to make this design an

extremely efficient and reliable device for use in Automotive

applications and a wide variety of other applications.

S

D

G

Description

07/01/04

www.irf.com

1

l

Ultra Low On-Resistance

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175°C Operating Temperature

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Fast Switching

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Repetitive Avalanche Allowed up to Tjmax

Features

Typical Applications

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42 Volts Automotive Electrical Systems

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Lead-Free

AUTOMOTIVE MOSFET

IRF3007SPbF

IRF3007LPbF

TO-262

IRF3007L

IRF3007S

For recommended footprint and soldering techniques refer to application note #AN-994.

Parameter

Max.

Units

62

44

A

Pulsed Drain Current



320

Power Dissipation

120

W

Linear Derating Factor

0.8

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

290

mJ

Single Pulse Avalanche Energy Tested Value

‡

946

Avalanche Current



See Fig.12a, 12b, 15, 16

A

Repetitive Avalanche Energy

†

mJ

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

1.25

°C/W

Junction-to-Ambient (PCB Mounted,steady state)**

–––

62

Thermal Resistance

PD - 95494