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IRF3007SPBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRF3007SPBF
Spiegazioni elettronici  HEXFET Power MOSFET
Download  11 Pages
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF3007SPBF Scheda tecnica(HTML) 2 Page - International Rectifier

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IRF3007S/LPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.084 –––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
10.5
12.6
m
VGS = 10V, ID = 48A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = 10V, ID = 250µA
gfs
Forward Transconductance
180
–––
–––
S
VDS = 25V, ID = 48A
–––
–––
20
µA
VDS = 75V, VGS = 0V
–––
–––
250
VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -20V
Qg
Total Gate Charge
–––
89
130
ID = 48A
Qgs
Gate-to-Source Charge
–––
21
32
nC
VDS = 60V
Qgd
Gate-to-Drain ("Miller") Charge
–––
30
45
VGS = 10V
td(on)
Turn-On Delay Time
–––
12
–––
VDD = 38V
tr
Rise Time
–––
80
–––
ID = 48A
td(off)
Turn-Off Delay Time
–––
55
–––
RG = 4.6Ω
tf
Fall Time
–––
49
–––
VGS = 10V
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
3270 –––
VGS = 0V
Coss
Output Capacitance
–––
520
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
78
–––
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
3500 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
340
–––
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
…
–––
640
–––
VGS = 0V, VDS = 0V to 60V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 48A, VGS = 0V
„
trr
Reverse Recovery Time
–––
85
130
ns
TJ = 25°C, IF = 48A, VDD = 38V
Qrr
Reverse Recovery Charge
–––
280
420
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
80
†
320
A
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting T
J = 25°C, L = 0.24mH
RG = 25Ω, IAS = 48A, VGS=10V (See Figure 12).
ƒ I
SD ≤ 48A, di/dt ≤ 330A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Limited by T
Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.


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