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74AUP1G885DC Scheda tecnica(PDF) 11 Page - NXP Semiconductors

Il numero della parte 74AUP1G885DC
Spiegazioni elettronici  Low-power dual function gate
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Produttore elettronici  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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74AUP1G885DC Scheda tecnica(HTML) 11 Page - NXP Semiconductors

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74AUP1G885_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Preliminary data sheet
Rev. 01.00 — 26 January 2006
11 of 19
Philips Semiconductors
74AUP1G885
Low-power dual function gate
[1]
All typical values are measured at nominal VCC.
[2]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(C
L × VCC
2
× f
o) = sum of the outputs.
[3]
The condition is VI = GND to VCC.
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH propagation
delay A, B to 2Y
see Figure 4
VCC = 0.8 V
-
38.9
-
ns
VCC = 1.1 V to 1.3 V
2.6
10.0
20.5
ns
VCC = 1.4 V to 1.6 V
2.6
6.9
11.9
ns
VCC = 1.65 V to 1.95 V
2.7
5.7
9.5
ns
VCC = 2.3 V to 2.7 V
2.5
4.7
6.9
ns
VCC = 3.0 V to 3.6 V
2.4
4.4
6.1
ns
Tamb = 25 °C
CPD
power dissipation capacitance f = 1 MHz
[2] [3]
VCC = 0.8 V
-
2.7
-
pF
VCC = 1.1 V to 1.3 V
-
2.9
-
pF
VCC = 1.4 V to 1.6 V
-
3.0
-
pF
VCC = 1.65 V to 1.95 V
-
3.1
-
pF
VCC = 2.3 V to 2.7 V
-
3.5
-
pF
VCC = 3.0 V to 3.6 V
-
4.1
-
pF
Table 9:
Dynamic characteristics …continued
Voltages are referenced to GND (ground=0V; for test circuit see Figure 5
Symbol
Parameter
Conditions
Min
Typ [1]
Max
Unit


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