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NZT902 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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NZT902 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com NZT902 Rev. B tm September 2006 NZT902 NPN Low Saturation Transistor • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 °C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* T a=25°C unless otherwise noted * Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. Electrical Characteristics* T a = 25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Symbol Parameter Value Units VCEO Collector-Emitter Voltage 90 V VCBO Collector-Base Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 3 A TJ Junction Temperature 150 °C TSTG Storage Temperature Range - 55 ~ +150 °C Symbol Parameter Value Units PD Total Device Dissipation 1 W RθJA Thermal Resistance, Junction to Ambient 125 °C/W Symbol Parameter Test Conditions Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC = 10mA 90 V BVCBO Collector-Base Breakdown Voltage IC = 100µA 120 V BVEBO Emitter-Base Breakdown Voltage IE = 100µA 5 V ICBO Collector-Base Cutoff Current VCB = 100V VCB = 100V, Ta = 100 °C 100 10 nA uA IEBO Emitter-Base Cutoff Current VEB = 4V 100 nA hFE DC Current Gain IC = 0.1A, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V 80 80 25 VCE(sat) Collector-Emitter Saturation Voltage IC = 0.1A, IB = 5.0mA IC = 1A, IB = 100mA IC = 3A, IB = 300mA 50 250 600 mV mV mV VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 100mA 1.25 V Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 35 pF fT Transition Frequency IC = 100mA, VCE = 5V, f = 100MHz 75 MHz SOT-223 1 2 4 3 1. Base 2. Collector 3. Emitter |
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