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NZT902 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte NZT902
Spiegazioni elettronici  NPN Low Saturation Transistor
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
NZT902 Rev. B
tm
September 2006
NZT902
NPN Low Saturation Transistor
• These devices are designed with high current gain and
low saturation voltage with collector currents up to 3A continuous.
Absolute Maximum Ratings* T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T
a=25°C unless otherwise noted
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm.
Electrical Characteristics* T
a = 25°C unless otherwise noted
* Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2.0%
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
90
V
VCBO
Collector-Base Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
- Continuous
3
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
- 55 ~ +150
°C
Symbol
Parameter
Value
Units
PD
Total Device Dissipation
1
W
RθJA
Thermal Resistance, Junction to Ambient
125
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA
90
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA
120
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA
5
V
ICBO
Collector-Base Cutoff Current
VCB = 100V
VCB = 100V, Ta = 100 °C
100
10
nA
uA
IEBO
Emitter-Base Cutoff Current
VEB = 4V
100
nA
hFE
DC Current Gain
IC = 0.1A, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
80
80
25
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.1A, IB = 5.0mA
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
50
250
600
mV
mV
mV
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1A, IB = 100mA
1.25
V
Cobo
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
35
pF
fT
Transition Frequency
IC = 100mA, VCE = 5V, f = 100MHz
75
MHz
SOT-223
1
2
4
3
1. Base 2. Collector 3. Emitter


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