BU4506DX datasheet(4/6 Pages) PHILIPS

Il numero della parte	BU4506DX

Spiegazioni elettronici	Silicon Diffused Power Transistor

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Produttore elettronici	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506DX

Fig.7. Typical collector-emitter saturation voltage.

Fig.8. Typical base-emitter saturation voltage.

Fig.9. Typical collector storage and fall time.

I

C =3 A; Tj = 85˚C; f = 16kHz

Fig.10. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C

Fig.11. Transient thermal impedance.

BU4506DF/X/Z

0.1

1

10

0

0.2

0.4

0.6

0.8

1

IC / A

VCESAT / V

IC/IB = 5

Ths = 25 C

Ths = 85 C

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

0

123

4

0.6

0.7

0.8

0.9

1

1.1

1.2

IB / A

VBESAT / V

IC = 3 A

Ths = 25 C

Ths = 85 C

BU4506DF/X/Z

0.001

0.01

0.1

1

10

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00 1E+01

t / s

`

D = 0.5

0.2

0.1

0.05

0.02

D = 0

tp

D = tp/T

T

P

t

D

BU4506DF/DX

Zth (K/W)

0

0.5

1

1.5

2

0

2

4

6

8

10

IB / A

ts/tf/ us

ICsat = 3 A

Ths = 85 C

Freq = 16 kHz

BU4506D ts/tf

January 1999

4

Rev 1.000

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