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BU2708AX Scheda tecnica(PDF) 5 Page - NXP Semiconductors |
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BU2708AX Scheda tecnica(HTML) 5 Page - NXP Semiconductors |
5 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX Fig.13. Normalised power dissipation. PD% = 100 ⋅PD/PD 25˚C = f (T hs) Fig.14. Transient thermal impedance. Z th j-hs = f(t); parameter D = tp/T Fig.15. Test Circuit RBSOA. V CC = 150 V; -V BB = 1 - 4 V; L C = 1 mH; VCL = 1500 V; LB = 1 - 3 µH; C FB = 1 - 4 nF; IB(end) = 0.8 - 4 A Fig.16. Reverse bias safe operating area. T j ≤ Tjmax 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound LB IBend -VBB LC T.U.T. VCC VCL CFB 1.0E-06 1E-04 1E-02 1E+00 0.001 0.01 0.1 1 10 0 0.2 0.1 0.05 0.02 0.5 BU2708AF/DF tp / sec Zth / K/W D = D = tp tp T T P t D 100 1000 0 2 4 6 8 10 12 14 16 VCE / V IC / A BU2708AF/DF Area where Fails occur 1700 September 1997 5 Rev 1.100 |
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