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BU2522AF Scheda tecnica(PDF) 1 Page - NXP Semiconductors |
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BU2522AF Scheda tecnica(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for use in horizontal deflection circuits of pc monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 10 A I CM Collector current peak value - 25 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W V CEsat Collector-emitter saturation voltage I C = 6.0 A; IB = 1.2 A - 5.0 V I Csat Collector saturation current f = 64 kHz 6.0 - A t f Fall time I Csat = 6.0 A; f = 64 kHz 0.16 0.22 µs PINNING - SOT199 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 10 A I CM Collector current peak value - 25 A I B Base current (DC) - 6 A I BM Base current peak value - 9 A -I B(AV) Reverse base current average over any 20 ms period - 150 mA -I BM Reverse base current peak value 1 -6 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-hs Junction to heatsink with heatsink compound - 2.8 K/W R th j-a Junction to ambient in free air 35 - K/W 12 3 case b c e 1 Turn-off current. September 1997 1 Rev 1.400 |
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